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1N751A 80C31 B00DD222 C0050G BAT54 MOD5272 8117C AME8845
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  2SC4373 0.8 a , 120 v npn plastic-encapsulate transistor elektronische bauelemente 09-jun-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a e c d b k h f g l j 1 2 3 4 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features  small flat package.  large current capacity. classification of h fe package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 120 v emitter to base voltage v ebo 5 v continuous collector current i c 800 ma collector power dissipation p c 500 mw thermal resistance junction to ambient r ja 250 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 120 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 120 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =1ma, i c =0 collector cut-off current i cbo - - 0.1 a v cb =120 v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain h fe 80 - 240 v ce =5v, i c =100ma collector to emitter saturation voltage v ce(sat) - - 1 v i c =500ma, i b =50ma base to emitter voltage v be - - 1 v v ce =5v, i c =500ma transition frequency f t - 120 - mhz v ce =5v, i c =500ma collector output capacitance c ob - - 30 pf v cb =10v, i e =0 , f=1mhz product-rank 2SC4373-o 2SC4373-y range 80~160 120~240 marking co cy sot-89 ref. millimeter ref. millimeter min. max. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20


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